Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 21 ns
Technical parameters/Input capacitance (Ciss): 5110pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 15.65 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP141NF55
|
ST Microelectronics | 功能相似 | TO-220-3 |
N沟道55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO- 220的STripFET ™II功率MOSFET N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
|
||
STP80NF55-06
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP80NF55-06 晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
|
||
STP80NF55-08
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP80NF55-08 晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
|
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