Technical parameters/rated current: 260 mA
Technical parameters/inductance: 3.3 µH
Technical parameters/Q value: 30
Technical parameters/product series: IMC
Technical parameters/inductance tolerance: ±10 %
Technical parameters/Resistance (DC): 1.2 Ω
Encapsulation parameters/Encapsulation (metric): 3225
Encapsulation parameters/Encapsulation: 1210
External dimensions/length: 3.2 mm
External dimensions/width: 2.5 mm
Dimensions/Packaging (Metric): 3225
External dimensions/packaging: 1210
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IMC1210AN3R3K
|
Vishay Dale | 类似代替 | 1210 |
Ind Chip Molded Wirewound 3.3uH 10% 7.96MHz 30Q-Factor Powdered Iron 260mA 1210 T/R
|
||
IMC1210AN3R3K
|
Vishay Semiconductor | 类似代替 |
Ind Chip Molded Wirewound 3.3uH 10% 7.96MHz 30Q-Factor Powdered Iron 260mA 1210 T/R
|
|||
IMC1210ER3R3K
|
VISHAY | 类似代替 | 1210 |
Inductor RF Chip Molded Wirewound 3.3uH 10% 7.96MHz 30Q-Factor Powdered Iron 260mA 1.2Ω DCR 1210 T/R
|
||
IMC1210ER3R3K
|
Vishay Semiconductor | 类似代替 | 1210 |
Inductor RF Chip Molded Wirewound 3.3uH 10% 7.96MHz 30Q-Factor Powdered Iron 260mA 1.2Ω DCR 1210 T/R
|
||
IMC1210ER3R3K
|
Vishay Dale | 类似代替 | 1210 |
Inductor RF Chip Molded Wirewound 3.3uH 10% 7.96MHz 30Q-Factor Powdered Iron 260mA 1.2Ω DCR 1210 T/R
|
||
IMC1210ET3R3K
|
VISHAY | 类似代替 | 1210 |
Ind Chip Molded Wirewound 3.3uH 10% 7.96MHz 30Q-Factor Powdered Iron 260mA 1210 T/R
|
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