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Model 6MBI75U4B-120-50
Description IGBT Module, 6 packs, Fuji Electric V - series, 6th generation field block U/U4 series, 5th generation field block S - series, 4th generation NPT injection module. The maximum collector current (Ic) value per crystal is rated. IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistors or IGBTs are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: FUJI
Packaging M633
Delivery time
Packaging method
Standard packaging quantity 1
864.79  yuan 864.79yuan
1+:
$ 985.8583
10+:
$ 951.2668
50+:
$ 946.9429
100+:
$ 942.6189
150+:
$ 935.7006
250+:
$ 929.6471
500+:
$ 923.5936
1000+:
$ 916.6753
Quantity
1+
10+
50+
100+
150+
Price
$985.8583
$951.2668
$946.9429
$942.6189
$935.7006
Price $ 985.8583 $ 951.2668 $ 946.9429 $ 942.6189 $ 935.7006
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4696) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 390 W

Technical parameters/rise time: 320 ns

Technical parameters/isolation voltage: 2.50 kV

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/dissipated power (Max): 390 W

Package parameters/number of pins: 35

Encapsulation parameters/Encapsulation: M633

External dimensions/length: 122 mm

External dimensions/width: 62 mm

External dimensions/height: 17 mm

External dimensions/packaging: M633

Compliant with standards/RoHS standards: RoHS Compliant

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