Technical parameters/forward voltage: 1.8V @15A
Technical parameters/reverse recovery time: 0 ns
Technical parameters/forward current: 15 A
Technical parameters/Maximum forward surge current (Ifsm): 78 A
Technical parameters/forward voltage (Max): 1.8V @15A
Technical parameters/forward current (Max): 15 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 185000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/packaging: TO-220-2
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GB20SLT12-247
|
GeneSiC Semiconductor | 功能相似 | TO-247-2 |
GENESIC SEMICONDUCTOR GB20SLT12-247 Silicon Carbide Schottky Diode, SiC, 1200V Series, Single, 1.2kV, 20A, 112NC, TO-247AC
|
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