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Model SI4884DY
Description Optimization of Single N-channel Logic Level PWM PowerTrench MOSFET Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Product QR code
Brand: Fairchild
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.27  yuan 1.27yuan
5+:
$ 1.7145
25+:
$ 1.5875
50+:
$ 1.4986
100+:
$ 1.4605
500+:
$ 1.4351
2500+:
$ 1.4034
5000+:
$ 1.3907
10000+:
$ 1.3716
Quantity
5+
25+
50+
100+
500+
Price
$1.7145
$1.5875
$1.4986
$1.4605
$1.4351
Price $ 1.7145 $ 1.5875 $ 1.4986 $ 1.4605 $ 1.4351
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3645) Minimum order quantity(5)
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Technical parameters/drain source resistance: 8.50 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.50 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 11.5 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS8880 FDS8880 Rochester 功能相似 SOIC
FAIRCHILD SEMICONDUCTOR FDS8880 晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
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