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Model 2SD2607FU6
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) Trans Darlington NPN 100V 8A
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Brand: ROHM Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8588) Minimum order quantity(1)
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Technical parameters/dissipated power: 30 W

Technical parameters/breakdown voltage (collector emitter): 100 V

Technical parameters/minimum current amplification factor (hFE): 1000 @2A, 3V

Technical parameters/rated power (Max): 2 W

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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