Technical parameters/frequency: 180 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 170 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 40 @0.5A, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PD602AS,115
|
NXP | 完全替代 | SOT-23-3 |
MPAK NPN 50V 0.5A
|
||
2PD602ASL,235
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB NPN 50V 0.5A
|
||
2PD602ASL,235
|
Nexperia | 类似代替 | SOT-23-3 |
TO-236AB NPN 50V 0.5A
|
||
MSD602-RT1G
|
ON Semiconductor | 功能相似 | SC-59-3 |
NPN通用放大器晶体管表面贴装 NPN General Purpose Amplifier Transistor Surface Mount
|
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