Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 290 @2mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 290 @2mA, 10V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PD601AS
|
NXP | 类似代替 | SOT-23 |
2PD601AS NPN三极管 60V 100mA/0.1A 140MHz 290~460 500mV/0.5V SOT-23/SC-59 marking/标记 ZS 开关 放大器应用
|
||
2PD601AS
|
Philips | 类似代替 | MPAK |
2PD601AS NPN三极管 60V 100mA/0.1A 140MHz 290~460 500mV/0.5V SOT-23/SC-59 marking/标记 ZS 开关 放大器应用
|
||
|
|
NXP | 类似代替 | TO-236 |
50 V , 100毫安NPN通用晶体管 50 V, 100 mA NPN general-purpose transistors
|
||
2PD601ASW
|
Philips | 完全替代 | SOT-323 |
NPN通用晶体管 NPN general purpose transistor
|
||
|
|
Kexin | 完全替代 |
NPN通用晶体管 NPN general purpose transistor
|
|||
2PD601ASW
|
NXP | 完全替代 | SOT-323-3 |
NPN通用晶体管 NPN general purpose transistor
|
||
2SD1819ASL
|
Panasonic | 功能相似 | SMini3-G1 |
SMini3-G1 NPN 50V 0.2A
|
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