Technical parameters/capacitors: 0.25 pF
Technical parameters/dissipated power: -
Technical parameters/forward voltage (Max): 350 mV
Technical parameters/forward current (Max): 1 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HSMS-286B-BLKG
|
AVAGO Technologies | 完全替代 | SOT-323 |
Diode RF Detector Schottky 4V 3Pin SOT-323 Bulk
|
||
HSMS-286B-TR1
|
AVAGO Technologies | 功能相似 | SOT-323 |
DIODE SCHOTTKY DETECT 4V SOT-323
|
||
HSMS-286B-TR1G
|
Broadcom | 完全替代 | SOT-323-3 |
Diode RF Detector Schottky 4V 3Pin SOT-323 T/R
|
||
HSMS-286B-TR1G
|
AVAGO Technologies | 完全替代 | SOT-323-3 |
Diode RF Detector Schottky 4V 3Pin SOT-323 T/R
|
||
HSMS-286B-TR1G
|
Broadcom | 完全替代 | SOT-323-3 |
Diode RF Detector Schottky 4V 3Pin SOT-323 T/R
|
||
HSMS-286B-TR2G
|
AVAGO Technologies | 完全替代 | SOT-323-3 |
Diode RF Schottky 4V 3Pin SOT-323 T/R
|
||
HSMS-286B-TR2G
|
Broadcom | 完全替代 | SOT-323-3 |
Diode RF Schottky 4V 3Pin SOT-323 T/R
|
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