Technical parameters/frequency: 5GHz ~ 17GHz
Technical parameters/power supply current: 180 mA
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 1.06 W
Technical parameters/gain: 31 dB
Technical parameters/testing frequency: 5 GHz
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1060 mW
Technical parameters/power supply voltage: 5 V
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: DIE
External dimensions/height: 0.1 mm
External dimensions/packaging: DIE
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Aerospace and Defense, Radar
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC414MS8GE
|
Hittite | 功能相似 | TSSOP-8 |
ANALOG DEVICES HMC414MS8GE. 芯片, INGAP HBT功率放大器, SMT 2.2 - 2.8 GHZ
|
||
HMC633-SX
|
Hittite | 类似代替 | DIE |
RF Amp Single Driver Amp 17GHz 5.5V 7Pin Die Tray
|
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