Technical parameters/number of pins: 2
Technical parameters/forward voltage: 500mV @200mA
Technical parameters/thermal resistance: 450℃/W (RθJA)
Technical parameters/forward current: 200 mA
Technical parameters/Maximum forward surge current (Ifsm): 1 A
Technical parameters/forward voltage (Max): 500mV @200mA
Technical parameters/forward current (Max): 200 mA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 125℃ (Max)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-523-2
External dimensions/length: 1.25 mm
External dimensions/width: 0.85 mm
External dimensions/height: 0.65 mm
External dimensions/packaging: SOD-523-2
Physical parameters/operating temperature: -65℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RB521S-30TE61
|
ROHM Semiconductor | 功能相似 | SOD-523-2 |
ROHM RB521S-30TE61 小信号肖特基二极管, 单, 30 V, 200 mA, 500 mV, 1 A, 125 °C
|
||
RB521S30T1
|
ON Semiconductor | 功能相似 | SOD-523 |
肖特基二极管 Schottky Barrier Diode
|
||
RB521S30T1G
|
ON Semiconductor | 功能相似 | SOD-523 |
ON SEMICONDUCTOR RB521S30T1G 小信号肖特基二极管, 单, 30 V, 200 mA, 500 mV, 1 A, 125 °C
|
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