Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 3.00 A
Technical parameters/capacitors: 30.0 pF
Technical parameters/output current: ≤3.00 A
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1.2 V
Technical parameters/polarity: Standard
Technical parameters/thermal resistance: 20℃/W (RθJA)
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 200 A
Technical parameters/forward voltage (Max): 1.2 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/length: 9.5 mm
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: 50℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5401-E3
|
Vishay Semiconductor | 完全替代 | DO-201AD |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器，Vishay Semiconductor
|
||
1N5401-T
|
Diodes | 功能相似 | DO-201AD |
Diode Switching 100V 3A 2Pin DO-201AD T/R
|
||
1N5401/54
|
Vishay Semiconductor | 类似代替 | DO-201AD |
DIODE GEN PURP 100V 3A DO201AD
|
||
|
|
Secos | 功能相似 |
ON SEMICONDUCTOR 1N5401G 快速恢复功率整流器
|
|||
|
|
EIC | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5401G 快速恢复功率整流器
|
||
|
|
UTC | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5401G 快速恢复功率整流器
|
||
1N5401G
|
VISHAY | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5401G 快速恢复功率整流器
|
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