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Technical parameters/forward voltage: 1.2 V
Technical parameters/Maximum reverse voltage (Vrrm): 200 V
Technical parameters/forward current: 3000 mA
Technical parameters/maximum reverse leakage current (Ir): 5 uA
Technical parameters/forward current (Max): 3000 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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General Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
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PFS | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
|
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1N5402
|
Multicomp | 功能相似 | DO-201AD |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
|
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1N5402
|
Diotec Semiconductor | 功能相似 | DO-201 |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
|
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1N5402
|
Major Brands | 功能相似 | DO-201AD |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
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1N5402
|
Gulfsemi | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
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1N5402
|
Vishay Intertechnology | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
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1N5402
|
Won-Top Electronics | 功能相似 | DO-201AD |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
|
||
|
1N5402
|
EIC | 功能相似 | DO-201AD |
FAIRCHILD SEMICONDUCTOR 1N5402 标准恢复二极管, 单, 200 V, 3 A, 1.2 V, 200 A
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VISHAY | 类似代替 | DO-201AD |
整流器 3.0 Amp 200 Volt
|
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1N5402-E3/73
|
Vishay Semiconductor | 类似代替 | DO-201AD |
整流器 3.0 Amp 200 Volt
|
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1N5402-G
|
Comchip Technology | 功能相似 | DO-27-2 |
二极管 - 通用，功率，开关 VR=200V, IO=3A
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