Technical parameters/rated voltage (DC): 2.70 V
Technical parameters/tolerances: ±5 %
Technical parameters/rated power: 500 mW
Technical parameters/output current: ≤135 mA
Technical parameters/forward voltage: 1.5V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 2.7 V
Technical parameters/forward voltage (Max): 1.5V @200mA
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5223B
|
Fairchild | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5223B.. 齐纳二极管
|
||
1N5223B
|
Motorola | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5223B.. 齐纳二极管
|
||
1N5223B
|
Microsemi | 类似代替 | DO-35-2 |
FAIRCHILD SEMICONDUCTOR 1N5223B.. 齐纳二极管
|
||
1N5223B
|
Central Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5223B.. 齐纳二极管
|
||
1N5223B
|
NTE Electronics | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5223B.. 齐纳二极管
|
|||
1N5223B
|
Leshan Radio | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5223B.. 齐纳二极管
|
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