Technical parameters/rated voltage (DC): 10.0 V
Technical parameters/capacitors: 47 µF
Technical parameters/tolerances: ±10 %
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/rated voltage: 10 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: Radial
Packaging parameters/pin spacing: 2.54 mm
External dimensions/height: 10.16 mm
External dimensions/packaging: Radial
External dimensions/pin spacing: 2.54 mm
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D476X0010D1V1E3
|
Vishay Semiconductor | 功能相似 | Through Hole |
Capacitor; Tantalum; Cap 47uF; Tol 20%; Vol-Rtg 10VDC; Radial; Case D
|
||
199D476X0010D1V1E3
|
Vishay Sprague | 功能相似 |
Capacitor; Tantalum; Cap 47uF; Tol 20%; Vol-Rtg 10VDC; Radial; Case D
|
|||
199D476X0010D2B1E3
|
Vishay Semiconductor | 功能相似 |
CAP TANT 47uF 10V 20% RADIAL
|
|||
199D476X0010D2B1E3
|
VISHAY | 功能相似 | Radial |
CAP TANT 47uF 10V 20% RADIAL
|
||
199D476X96R3D1V1E3
|
VISHAY | 功能相似 | Radial |
199D 系列 47 uF ±10 % 6.3 V 径向 固体 电解质钽电容
|
||
199D476X96R3D1V1E3
|
Vishay Sprague | 功能相似 | 0.24 in |
199D 系列 47 uF ±10 % 6.3 V 径向 固体 电解质钽电容
|
||
199D476X96R3D1V1E3
|
Vishay Semiconductor | 功能相似 | Radial |
199D 系列 47 uF ±10 % 6.3 V 径向 固体 电解质钽电容
|
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