Technical parameters/rated voltage (DC): 25 V
Technical parameters/capacitors: 4.7 µF
Technical parameters/tolerances: ±20 %
Technical parameters/product series: 199D
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: Radial
Packaging parameters/pin spacing: 2.54 mm
External dimensions/height: 7.62 mm
External dimensions/diameter: Φ5.00mm
External dimensions/packaging: Radial
External dimensions/pin spacing: 2.54 mm
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D475X0016B1V1E3
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Vishay Semiconductor | 功能相似 |
CAP TANT 4.7uF 16V 20% RADIAL
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199D475X0025B1V1E3
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VISHAY | 完全替代 | Radial |
199D 系列 Vishay 199D 将经济型和高性能完美融合于这些径向引线、固体电解质 Tantalex® 电容器中。 199D 系列电气参数稳定、可靠性高、工作寿命长;非常适用于需要高容积效率的地方。 ### 径向 85 ° C
|
||
199D475X0025B1V1E3
|
Vishay Semiconductor | 完全替代 |
199D 系列 Vishay 199D 将经济型和高性能完美融合于这些径向引线、固体电解质 Tantalex® 电容器中。 199D 系列电气参数稳定、可靠性高、工作寿命长;非常适用于需要高容积效率的地方。 ### 径向 85 ° C
|
|||
199D475X9025B1V1E3
|
Vishay Sprague | 功能相似 | 0.2 in |
VISHAY 199D475X9025B1V1E3 钽电容, 4.7uF, 25V, 径向引线
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199D475X9025B1V1E3
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Vishay Intertechnology | 功能相似 |
VISHAY 199D475X9025B1V1E3 钽电容, 4.7uF, 25V, 径向引线
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