Technical parameters/number of channels: 5
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/maximum allowable collector current: 0.065A
Technical parameters/minimum current amplification factor (hFE): 20 @10mA, 2V
Technical parameters/rated power (Max): 150 mW
Technical parameters/DC current gain (hFE): 60
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Sensing & Instrumentation, Industrial, Power Management, RF Communications
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HFA3128B96
|
Harris | 功能相似 |
RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, PNP, MS-012AC
|
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