Technical parameters/Maximum forward surge current (Ifsm): 150 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: GBU
External dimensions/length: 22.3 mm
External dimensions/width: 3.56 mm
External dimensions/height: 18.8 mm
External dimensions/packaging: GBU
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBU4B
|
GeneSiC Semiconductor | 功能相似 | SIP-4 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 100V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
|
|
EIC | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 100V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
GBU4B
|
Fairchild | 功能相似 | SIP-4 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 100V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
GBU4B
|
Sensitron Semiconductor | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 100V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
GBU4B
|
DC Components | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 100V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
GBU4B-E3/45
|
Vishay Semiconductor | 功能相似 | SIP-4 |
VISHAY GBU4B-E3/45 二极管 桥式整流, 单相, 100 V, 4 A, SIP, 1 V, 4 引脚
|
||
GBU4B-E3/45
|
VISHAY | 功能相似 | GBU |
VISHAY GBU4B-E3/45 二极管 桥式整流, 单相, 100 V, 4 A, SIP, 1 V, 4 引脚
|
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