Technical parameters/forward voltage: 1.1V @17.5A
Technical parameters/Maximum forward surge current (Ifsm): 400 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: GBPC-W
External dimensions/packaging: GBPC-W
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBPC3510-BP
|
Micro Commercial Components | 类似代替 | Square-4 |
GBPC 1000V 35A
|
||
KBPC3510T
|
American Semiconductor | 类似代替 |
Diode Rectifier Bridge Single 1kV 35A 4Pin Case GBPC-T
|
|||
KBPC3510T
|
GeneSiC Semiconductor | 类似代替 | KBPC-TW-4 |
Diode Rectifier Bridge Single 1kV 35A 4Pin Case GBPC-T
|
||
|
|
Vishay Intertechnology | 类似代替 |
GENESIC SEMICONDUCTOR KBPC3510W Bridge Rectifier Diode, Single, 1kV, 35A, KBPC, 1.1V, 4Pins
|
|||
KBPC3510W
|
Diotec Semiconductor | 类似代替 |
GENESIC SEMICONDUCTOR KBPC3510W Bridge Rectifier Diode, Single, 1kV, 35A, KBPC, 1.1V, 4Pins
|
|||
KBPC3510W
|
Comchip Technology | 类似代替 |
GENESIC SEMICONDUCTOR KBPC3510W Bridge Rectifier Diode, Single, 1kV, 35A, KBPC, 1.1V, 4Pins
|
|||
KBPC3510W
|
HY Electronic | 类似代替 | KBPC W |
GENESIC SEMICONDUCTOR KBPC3510W Bridge Rectifier Diode, Single, 1kV, 35A, KBPC, 1.1V, 4Pins
|
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