Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 6.40 A
Technical parameters/drain source resistance: 1.93 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 198 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 6.40 A
Technical parameters/Input capacitance (Ciss): 1880pF @25V(Vds)
Technical parameters/rated power (Max): 198 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 198W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA8N90C
|
ON Semiconductor | 类似代替 | TO-3-3 |
900V N沟道MOSFET 900V N-Channel MOSFET
|
||
|
|
ON Semiconductor | 功能相似 | TO-3 |
N沟道MOSFET QFET® 900 V， 8 A， 1.9 I© N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω
|
||
FQA8N90C-F109
|
Fairchild | 功能相似 | SC-65 |
N沟道MOSFET QFET® 900 V， 8 A， 1.9 I© N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω
|
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