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Model FQPF7N65C_F105
Description MOSFET N-CH 650V 7A TO-220F
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Brand: ON Semiconductor
Packaging TO-220-3
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8742) Minimum order quantity(1)
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Technical parameters/dissipated power: 52W (Tc)

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/Input capacitance (Ciss): 1245pF @25V(Vds)

Technical parameters/dissipated power (Max): 52W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQPF7N65C FQPF7N65C Fairchild 类似代替 TO-220-3
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQPF7N65C, 7 A, Vds=650 V, 3引脚 TO-220F封装
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