Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 26 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 62 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 30A
Technical parameters/rise time: 450 ns
Technical parameters/Input capacitance (Ciss): 3600pF @25V(Vds)
Technical parameters/rated power (Max): 62 W
Technical parameters/descent time: 195 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 62W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.87 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF47P06
|
ON Semiconductor | 类似代替 | TO-220-3 |
FQPF47P06 系列 -60 V -30 A 26 mOhm P-沟道 QFET® MOSFET - TO-220F
|
||
FQPF47P06
|
Fairchild | 类似代替 | TO-220-3 |
FQPF47P06 系列 -60 V -30 A 26 mOhm P-沟道 QFET® MOSFET - TO-220F
|
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