Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 3.60 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.13 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 3.60 A
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 220pF @25V(Vds)
Technical parameters/rated power (Max): 3.13 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.13W (Ta), 45W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQI4N20
|
Fairchild | 功能相似 | I2PAK |
200V N沟道MOSFET 200V N-Channel MOSFET
|
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