Technical parameters/dissipated power: 3.13W (Ta), 85W (Tc)
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Input capacitance (Ciss): 500pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.13W (Ta), 85W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQI2N90
|
Fairchild | 功能相似 | TO-262 |
900V N沟道MOSFET 900V N-Channel MOSFET
|
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IRFBF20L
|
Vishay Semiconductor | 功能相似 | TO-262 |
MOSFET N-CH 900V 1.7A TO-262
|
||
IRFBF20LPBF
|
VISHAY | 功能相似 | TO-262-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-262
|
||
IRFBF20LPBF
|
LiteOn | 功能相似 | I2PAK-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-262
|
||
IRFBF20LPBF
|
Vishay Semiconductor | 功能相似 | TO-262 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-262
|
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