Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-343
External dimensions/packaging: SOT-343
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 14V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 2.5V
Other/Collector Continuous Output Current (IC): 40mA
Other/Cut off Frequency fTTransmission Frequency (fT): 45Ghz
Other/DC current gain hFEDC Current Gain (hFE): 50~150
Other/dissipated power PcPower Dissipation: 100mW/0.1W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFP181
|
Infineon | 功能相似 | SOT-143 |
NPN硅晶体管RF NPN Silicon RF Transistor
|
||
BFP193
|
Infineon | 功能相似 | SOT-143 |
BFP193 NPN三极管 20V 80mA 8Ghz 50~200 SOT-143 marking/标记 RC 低噪声和高增益宽带放大器
|
||
BFP520
|
Siemens Semiconductor | 功能相似 | SOT-343 |
Infineon ### 双极晶体管,Infineon
|
||
BFP520
|
Infineon | 功能相似 | SOT-343 |
Infineon ### 双极晶体管,Infineon
|
||
|
|
ON Semiconductor | 功能相似 |
NPN Epitaxial Silicon Transistor
|
|||
KSP10
|
Fairchild | 功能相似 |
NPN Epitaxial Silicon Transistor
|
|||
NE85633
|
NEC | 功能相似 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review