Technical parameters/polarity: PNP
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @500mA, 5V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FMMT593
|
Diodes | 功能相似 | SOT-23 |
单晶体管 双极, PNP, 100 V, 150 MHz, 500 mW, -1 A, 100 hFE
|
||
FMMT593TA
|
Diodes Zetex | 完全替代 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Medium Power
|
||
FMMT593TA
|
Diodes | 完全替代 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Medium Power
|
||
FMMT593TA
|
Zetex | 完全替代 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Medium Power
|
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