Technical parameters/frequency: 4 MHz
Technical parameters/dissipated power: 0.65 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/minimum current amplification factor (hFE): 14 @500mA, 2V
Technical parameters/rated power (Max): 650 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 650 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN3303FBU
|
ON Semiconductor | 类似代替 | TO-226-3 |
高压快速开关NPN功率晶体管 High Voltage Fast-Switching NPN Power Transistor
|
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