Technical parameters/frequency: 180 MHz
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-323
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJX733GTF
|
Fairchild | 功能相似 | SOT-323 |
Trans GP BJT PNP 50V 0.15A 3Pin SOT-323 T/R
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||
FJX733OTF
|
Fairchild | 功能相似 | SOT-323-3 |
低频放大器•集电极 - 基极电压VCBO=-60V•FJX945补
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FJX733YTF
|
ON Semiconductor | 类似代替 | SOT-323 |
PNP 晶体管，40 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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