Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 8.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 26 @2A, 5V
Technical parameters/rated power (Max): 40 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJPF13007H2TU
|
ON Semiconductor | 完全替代 | TO-220-3 |
NPN 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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