Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 68
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMUN2233LT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
偏置电阻晶体管 Bias Resistor Transistor
|
||
MMUN2233LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2233LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率, SOT-23
|
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