Technical parameters/dissipated power: 650 mW
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/minimum current amplification factor (hFE): 14 @500mA, 2V
Technical parameters/rated power (Max): 650 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 650 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
ON Semiconductor | 类似代替 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) NPN Silicon Planar Silicon Transistor
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