Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMDT3906-7-F
|
Diodes | 功能相似 | SOT-363 |
DIODES INC. MMDT3906-7-F 双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
|
||
|
|
Cinch Connectivity Solutions | 功能相似 |
DIODES INC. MMDT3906-7-F 双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
|
|||
MMDT3906-7-F
|
Diodes Zetex | 功能相似 | SOT-363 |
DIODES INC. MMDT3906-7-F 双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
|
||
UMT1NTN
|
ROHM Semiconductor | 功能相似 | SC-70-6 |
ROHM UMT1NTN 双极晶体管阵列, 混合式, PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
|
||
UMT1NTN
|
Ricoh | 功能相似 | SC-88 |
ROHM UMT1NTN 双极晶体管阵列, 混合式, PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
|
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