Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 5.50 A
Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 17 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 5.50 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1082pF @10V(Vds)
Technical parameters/rated power (Max): 600 mW
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/length: 4.4 mm
External dimensions/width: 3 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6954ADQ-T1-GE3
|
Vishay Siliconix | 功能相似 | TSSOP-8 |
Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 2Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, HALOGEN FREE AND ROHS COMPLIANT, MO-153, TSSOP-8
|
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