Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -120 mA
Technical parameters/drain source resistance: 13.0 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Continuous drain current (Ids): 120 mA
Technical parameters/Input capacitance (Ciss): 11pF @10V(Vds)
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDV302P
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDV302P 晶体管, MOSFET, P沟道, -120 mA, -25 V, 7.9 ohm, -4.5 V, -1 V
|
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