Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 17A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251
External dimensions/packaging: TO-251
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDU6682
|
Fairchild | 功能相似 | TO-220-3 |
30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
|
||
ISL9N306AD3
|
Fairchild | 类似代替 | TO-251 |
N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET 30V , 50A , 6mз N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
|
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