Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 3.5A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS9945
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS9945.. 双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 2.5 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review