Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 12.5A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6672A
|
Fairchild | 功能相似 | SOIC-8 |
30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
|
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