Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 1805pF @15V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8736PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF8736PBF 晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
|
||
IRF8736PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF8736PBF 晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
|
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