Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.017 Ω
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 2010pF @15V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 55 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4435A
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4435A 晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V
|
||
FDS6576
|
Rochester | 功能相似 | SOT |
PowerTrench® P 通道 MOSFET，Fairchild Semiconductor PowerTrench® MOSFET 是优化的电源开关，可提高系统效率和功率密度。 它们组合了小栅极电荷 (Qg)、小反向恢复电荷 (Qrr) 和软性反向恢复主体二极管，有助于快速切换交流/直流电源中的同步整流。 最新的 PowerTrench® MOSFET 采用屏蔽栅极结构，可提供电荷平衡。 利用这一先进技术，这些设备的 FOM（品质因素）显著低于之前的 FOM。 PowerTrench® MOSFET 的软性主体二极管性能可无需缓冲电路或替换更高额定电压的 MOSFET。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review