Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 14 mΩ
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 2900pF @15V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS5670
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS5670 晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
|
||
FDS5672
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS5672. 晶体管, N沟道
|
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