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Model FDS4080N3
Description MOSFET N-CH 40V 13A 8-SOIC
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Brand: ON Semiconductor
Packaging SOIC-8
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7814) Minimum order quantity(1)
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Technical parameters/dissipated power: 3W (Ta)

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/Input capacitance (Ciss): 1750pF @20V(Vds)

Technical parameters/dissipated power (Max): 3W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS4070N3 FDS4070N3 Fairchild 类似代替 SOIC-8
40V N沟道PowerTrench MOSFET的 40V N-Channel PowerTrench MOSFET
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FDS4070N7 FDS4070N7 Fairchild 类似代替 SOIC-8
40V N沟道PowerTrench MOSFET的 40V N-Channel PowerTrench MOSFET
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FDS4072N7 FDS4072N7 ON Semiconductor 类似代替 SOIC-8
40V N沟道PowerTrench MOSFET的 40V N-Channel PowerTrench MOSFET
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