Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 71 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 75A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 2400pF @15V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 71W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD8896
|
Fairchild | 类似代替 | TO-252-3 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDD8896, 94 A, Vds=30 V, 3引脚 DPAK (TO-252)封装
|
||
ISL9N306AD3ST
|
Fairchild | 类似代替 | TO-252-3 |
N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET 30V ， 50A ， 6mз N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
|
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