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Model FDD050N03B
Description PowerTrench® N Channel MOSFET, over 60A, Fairchild Semiconductor # # MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
10+:
$ 8.7084
100+:
$ 8.2730
500+:
$ 7.9827
1000+:
$ 7.9682
2000+:
$ 7.9101
5000+:
$ 7.8376
7500+:
$ 7.7795
10000+:
$ 7.7505
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7084
$8.2730
$7.9827
$7.9682
$7.9101
Price $ 8.7084 $ 8.2730 $ 7.9827 $ 7.9682 $ 7.9101
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5259) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 5.2 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 65 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/Continuous drain current (Ids): 90A

Technical parameters/rise time: 4.5 ns

Technical parameters/Input capacitance (Ciss): 2875pF @15V(Vds)

Technical parameters/rated power (Max): 65 W

Technical parameters/descent time: 4.5 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 65W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDD86102 FDD86102 Fairchild 类似代替 TO-252-3
PowerTrench® N 通道 MOSFET，20A 至 59.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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