Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @500mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.5 mm
External dimensions/width: 2.5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOT-89-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCX591ATA
|
Diodes | 功能相似 | SOT-89-3 |
FCX591A 系列 PNP 1 A 40 V 表面贴装 硅 中等功率 晶体管 - SOT-89
|
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