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Model FCA47N60
Description SuperFET® And SuperFET ® II N-channel MOSFET, Fairchild Semiconductor uses super junction technology to add SuperFET ® II High Voltage Power MOSFET Series. It provides the best robust body diode performance, suitable for AC-DC switch mode power supply (SMPS) applications that require high power density, system efficiency, and reliability, such as servers, telecommunications, computing, industrial power supplies, etc UPS/ESS、 Solar inverters and lighting applications. By utilizing advanced charge balancing technology, designers can achieve more efficient and cost-effective high-performance solutions, occupying less board space and improving reliability. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-3-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
38.24  yuan 38.24yuan
1+:
$ 46.6491
10+:
$ 43.9726
100+:
$ 41.9842
250+:
$ 41.6783
500+:
$ 41.3724
1000+:
$ 41.0283
2500+:
$ 40.7224
5000+:
$ 40.5312
Quantity
1+
10+
100+
250+
500+
Price
$46.6491
$43.9726
$41.9842
$41.6783
$41.3724
Price $ 46.6491 $ 43.9726 $ 41.9842 $ 41.6783 $ 41.3724
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9452) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 47.0 A

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 70 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 417 W

Technical parameters/threshold voltage: 5 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 47.0 A

Technical parameters/Input capacitance (Ciss): 8000pF @25V(Vds)

Technical parameters/rated power (Max): 417 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 417W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 16.2 mm

External dimensions/width: 5 mm

External dimensions/height: 20.1 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FCA47N60_F109 FCA47N60_F109 ON Semiconductor 功能相似 TO-3
600V N沟道MOSFET 600V N-Channel MOSFET
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