Technical parameters/frequency: 2.4GHz ~ 2.5GHz
Technical parameters/drain source resistance: 80 mΩ
Technical parameters/leakage source breakdown voltage: 65 V
Technical parameters/output power: 250 W
Technical parameters/gain: 15 dB
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-539-5
External dimensions/packaging: SOT-539-5
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF2425M7LS250P,11
|
NXP | 完全替代 |
RF Power Transistor, 2.4 to 2.5GHz, 250W, 13dB, 28V, LDMOS, SOT-539B
|
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