Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: NPN+PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/packaging: SOT-563
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
EMZ1DXV6T5
|
ON Semiconductor | 功能相似 | SOT-563 |
双路通用晶体管 Dual General Purpose Transistors
|
||
EMZ1DXV6T5G
|
ON Semiconductor | 功能相似 | SOT-563 |
双路通用晶体管 Dual General Purpose Transistors
|
||
EMZ1DXV6T5G
|
Vishay Semiconductor | 功能相似 | SOT-563 |
双路通用晶体管 Dual General Purpose Transistors
|
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