Technical parameters/rated voltage (DC): 12.0 V
Technical parameters/rated current: 500 mA
Technical parameters/rated power: 0.15 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 270 @10mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 270 @10mA, 2V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/length: 1.6 mm
External dimensions/width: 1.2 mm
External dimensions/height: 0.5 mm
External dimensions/packaging: SOT-563
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VT6T12T2R
|
ROHM Semiconductor | 功能相似 | SMD-6 |
VMT PNP 50V 0.1A
|
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