Technical parameters/forward voltage: 1V @200mA
Technical parameters/reverse recovery time: 4 ns
Technical parameters/forward voltage (Max): 1V @200mA
Technical parameters/forward current (Max): 0.2 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-204AH
External dimensions/packaging: DO-204AH
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | DO-35 |
NTE ELECTRONICS 1N3600 Small Signal Diode, Single, 50V, 150mA, 1V, 8ns, 2A
|
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|
|
ETC1 | 功能相似 |
NTE ELECTRONICS 1N3600 Small Signal Diode, Single, 50V, 150mA, 1V, 8ns, 2A
|
|||
|
|
Microsemi | 功能相似 | DO-204AH |
NTE ELECTRONICS 1N3600 Small Signal Diode, Single, 50V, 150mA, 1V, 8ns, 2A
|
||
|
|
Taitron | 功能相似 | 2 |
Small Signal Si-Diodes
|
||
|
|
Rectron | 功能相似 | DO-204AH |
Small Signal Si-Diodes
|
||
|
|
ETC1 | 功能相似 |
Small Signal Si-Diodes
|
|||
|
|
Vishay Semiconductor | 功能相似 | DO-35 |
Small Signal Si-Diodes
|
||
1N4150
|
National Semiconductor | 功能相似 |
Small Signal Si-Diodes
|
|||
1N4150
|
Good-Ark Electronics | 功能相似 | DO-34 |
Small Signal Si-Diodes
|
||
1N4150
|
ITT Corporation | 功能相似 |
Small Signal Si-Diodes
|
|||
1N4150
|
ON Semiconductor | 功能相似 | DO-204AH |
Small Signal Si-Diodes
|
||
1N4150
|
EIC | 功能相似 | DO-35 |
Small Signal Si-Diodes
|
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