Technical parameters/rated power: 0.15 W
Technical parameters/output voltage: 100 mV
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: EMT-3F-3
External dimensions/packaging: EMT-3F-3
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTC114EET1G
|
ON Semiconductor | 功能相似 | SC-75-3 |
ON SEMICONDUCTOR DTC114EET1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SOT-416
|
||
DTC114EM3T5G
|
ON Semiconductor | 功能相似 | SOT-723-3 |
NPN 晶体管，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 数字晶体管，On Semiconductor 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
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